tm january 2007 fdmc2674 n-channel ultrafet trench mosfet ?2006 fairchild semiconductor corporation fdmc2674 rev.f www.fairchildsemi.com 1 fdmc2674 n-channel ultrafet trench mosfet 220v, 7.0a, 366m features ? max r ds(on) = 366m at v gs = 10v, i d = 1.0a ? typ q g = 12.7nc at v gs = 10v ? low miller charge ? low q rr body diode ? optimized efficiency at high frequencies ? uis capability ( single pulse and repetitive pulse) ? rohs compliant general description ultrafet device combines c haracteristics that enable benchmark efficiency in power conversion applications. optimized for r ds(on) , low esr, low total and miller gate charge, these devices are ideal for hi gh frequency dc to dc converters. application ? dc/dc converters and off-line ups ? distributed power archite c tures mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 220 v v gs gate to source voltage 20 v i d drain current -continuous (silicon limited) t c = 25c 7.0 a -continuous t a = 25c (note 1b) 1.0 -pulsed 13.8 p d power dissipation t c = 25c 42 w power dissipation t a = 25c (note 1a) 2.1 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 3.0 c/w r ja thermal resistance, junction to ambient (note 1a) 60 device marking device package reel size tape width quantity fdmc2674 fdmc2674 power 33 7?? 8mm 3000 units power 33 4 3 2 1 5 6 7 8 s s s g d d d d 1 2 3 4 5 6 7 8 d d d d g s s s bottom top
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 220 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 248 mv/ c i dss zero gate voltage drain current v ds = 176v, v gs = 0v 1 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2 3.4 4 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -10.2 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 1.0a 305 366 m : v gs = 10v, i d = 1.0a , t j = 150 c 678 814 dynamic characteristics c iss input capacitance v ds = 100v, v gs = 0v, f = 1mhz 880 1180 pf c oss output capacitance 70 95 pf c rss reverse transfer capacitance 11 20 pf switching characteristics t d(on) turn-on delay time v dd = 100v, i d = 1.0a v gs = 10v, r gen = 2.4 : 9 18 ns t r rise time 13 23 ns t d(off) turn-off delay time 15 27 ns t f fall time 21 34 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 15v i d = 1.0a 12.7 18 nc q gs gate to source gate charge 3.8 nc q gd gate to drain ?miller? charge 2.9 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 2.2a (note 2) 0.8 1.5 v t rr reverse recovery time i f = 1.0a, di/dt = 100a/ p s 60 ns q rr reverse recovery charge 109 nc notes: 1: r t ja is determined with the device mounted on a 1 in 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ja is determined by the user's board design. (a) r t ja = 60c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5?x1.5?x0.062? thick pcb. (b) r t ja = 135c/w when mounted on a minimum pad of 2 oz copper. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 60c/w when mounted on a 1 in 2 pad of 2 oz copper b. 135c/w when mounted on a minimum pad of 2 oz copper
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 p s duty cycle = 0.5%max v gs = 4.5v v gs = 7v v gs = 5v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0.5 1.0 1.5 2.0 2.5 3.0 0.8 1.0 1.2 1.4 1.6 pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 10v v gs = 7v v gs = 5.0v v gs = 4.5v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.4 0.8 1.2 1.6 2.0 2.4 i d = 1a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 4 8 12 16 20 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d = 1a r ds(on) , drain to source on-resistance ( : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 23456 0 1 2 3 4 v dd = 5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.3 0.6 0.9 1.2 1e-4 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 20 s o u r c e t o d r a i n d i o d e forward voltage vs source current
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f www.fairchildsemi.com 4 figure 7. 03691215 0 2 4 6 8 10 v dd = 100v v gs , gate to source voltage(v) q g , gate charge(nc) i d = 1a gate charge characteristics figure 8. 0.1 1 10 100 10 100 1000 5 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 2000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 0.1 1 t j = 25 o c t j = 125 o c i as , avalanche current ( a ) 2 t av , time in avalanche(ms) u n c l a m p e d i n d u c t i v e switching capability figure 10. 0.1 1 10 100 1000 1e-3 0.01 0.1 1 10 10s dc 1s 100ms 10ms 1ms 100us single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c r d s(on) limited i d , drain current (a) v ds , drain to source voltage (v) 30 f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 single pulse r t ja = 135 o c/w 0.5 p ( pk ) , peak transient power (w) t, pulse width (s) 500 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - typical characteristics t j = 25c unless otherwise noted
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f www.fairchildsemi.com 5 figure 12. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 single pulse r t ja = 135 o c/w d = 0.5 0.2 0.1 0.05 0.02 0.01 duty cycle-descending order t, rectangular pulse duration (s) normalized thermal impedance, z t ja 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f www.fairchildsemi.com 6
fdmc2674 rev. f www.fairchildsemi.com 7 fdmc2674 n-channel uitrafet trench mosfet rev. i22 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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